On the gate capacitance of MOS structures of kane-type semiconductors under magnetic quantization

Abstract

An attempt is made to formulate the gate capacitance of MOS structures of Kane-type semiconductors under magnetic quantization, without any approximations of weak or strong electric field limits, on the basis of the fourth-order effective mass theory and taking into account the interactions of the conduction, light-hole, heavy-hole, and split-off bands. It is found, taking n-channel Hg1−xCdxTe as an example, that the gate capacitance exhibits spiky oscillations with changing magnetic field, which is in qualitative agreement with experimental observations, reported elsewhere, in MOS structures of the same semiconductor. The corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived.