Abstract
The galvanomagnetic effects in n-type semiconductors at low temperatures (KT<hw0) are considered in the electric field interval, in which electrons scatter energy by the spontaneous emission of optical phonons in the active region ε≥hw0, and momentum due to elastic collisions in the passive region ε<hw0. The distribution function of electrons in the active region is used in formulating the flux of electrons from the active region to the passive one as a result of the emission of optical phonons. In terms of the formulated flux the electron distribution in the passive region is determined, which is then used in calculating the galvanomagnetic coefficients. It is shown that the galvanomagnetic coefficients display the dependence on the probability of optical phonon emission, which did not appear in the approximate results of other investigators.
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