Abstract
Metalorganic vapor-phase epitaxial growth of GaAs doped with isovalent Sb is reported. By increasing the trimethylantimony concentration during growth the total Sb concentration was varied between 1×1017–1×1019 cm−3. A new deep level defect with an activation energy of the thermal emission rates of Ec−0.54 eV is observed. The defect concentration increases with increasing As partial pressure and with increasing Sb doping. It is also found that the EL2 concentration decreases with increasing Sb doping. The new energy level is suggested to be the 0/+ transition of the SbGa heteroantisite defect. No photocapacitance quenching effect, reflecting a metastable state as seen for EL2(AsGa), is observed for SbGa.
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