Abstract
Boron nitride films were prepared by using a low energy nitrogen ion beam and simultaneous vapor deposition of boron at room temperature. Films were analyzed by X-ray diffraction. Diffraction patterns show sharp peaks due to crystalline of the cubic boron nitride phase for every film formed with ion energies of 200–1000 eV. It is concluded that an ion beam in the low energy region is effective for forming the metastable cubic phase, c-BN.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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