Abstract
ABSTRACTCzochralski silicon wafers which are treated by hydrogen plasma at ca. 260 °C are structured at the surface due to the high reactivity of atomic hydrogen. “Nanopatterned” (np) Si layers with average structure diameters below 100 nm are created. The thickness of the np-Si layer is on the order of 100 nm. The morphology of np-Si layers depend on the applied plasma power and the exposure time. The formation of np-Si layers is discussed in the frame of a combined etching/ redeposition mechanism. Annealing at T ≥ 800 °C causes a reconstruction of np-Si layers and the appearance of tensile stress in the wafers up to a depth of several micrometers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
