Abstract

The compositional transition abruptness in a heterojunction is impaired by after-supply of reactants adsorbed at certain surfaces or stored in various types of stagnant volumes (for the case of “turn-off”). These volumes are found near valves, in vortices and in the boundary layer on the substrate. Expressions are derived for the shapes of the composition profiles to be expected from each of these factors separately, both after turn-off and after turn-on. These make it possible to estimate which factor is dominant and to suggest measures for improvement. In our growth apparatus, modification of the valves and reduction of the entry vortex in the reactor (by using a vertical “chimney reactor” with bottom inlet) have led to very considerable improvements.

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