Abstract
The influence of annealed proton exchanged (APE) waveguides on domain inversion in Z-cut LiNbO3 is reported. For this study, pyrophosphoric acid is used to fabricate planar APE waveguides, both before and after creating domain inversion through the application of an external electric field at room temperature. Domain inversion produced in this manner is shown to sustain the APE process. However, domain inversion is not producible in portions of the substrates having APE waveguides on both crystal faces. The implication of this result for integrated optic device fabrication is discussed.
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