Abstract
The barrier heights of metal-semiconductor or Schottky contacts are explained by the continuum of metal-induced gap states (MIGSs). A verification of the theoretically predicted values requires experimental barrier heights of Schottky contacts, which are not only intimate, abrupt, and free of impurities but also laterally homogeneous. Such data may be obtained from current-voltage and capacitance-voltage characteristics. Results of corresponding studies with Ag, Au, Cr, Pd, and Ti contacts on InP were recently published. The barrier heights of the respective laterally homogeneous Schottky contacts evaluated from those experimental data quantitatively confirm the predictions of the MIGS theory.
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