On the Experimental g Factor of Conduction Electrons in n-Type Inversion Layer on Silicon (100) Surface

Abstract

The detailed measurements of transverse conductivity on silicon (100) surface in n-inversion layer were done under the titled magnetic field. The g value of electrons was obtained as a function of carrier concentrations. Two kinds of g value were obtained; one is the case where the level separation between the adjacent levels are equal and the other is the one where the two levels (N, ↑) and (N+1, ↓) coincide with each other. The g value for the former is much larger than two and has a strong dependence on carrier concentrations, the larger its value at lower carrier concentrations. This increase of the g value is explained by the theory of Ando and Uemura and the good agreement with this theory was obtained. Whereas the g value for the latter has a weak dependence on carrier concentrations and further analysis for this reason is necessary.