On the excitonic effects of the 1T and 1O[formula omitted] phases of PdS2, PdSe2, and PdSSe monolayers

Abstract

We report the excitonic effects in the 1T and 1OT phases of PdS2, PdSe2, and PdSSe monolayers. Using fully relativistic norm-conserving non-local PBE pseudopotentials and including the spin–orbit (SOC) coupling, the 1T geometries are indirect band gap semiconductors; conversely, the 1OT structures are semimetallic. The band gaps were corrected using the HSE06 hybrid functional, making all structures semiconductors. Maximally localized Wannier functions were utilized to fit the bands of all six structures. The excitonic band structures were obtained using the Bethe–Salpeter equation (BSE), and the absorption coefficients were estimated at both the BSE and the independent particle approximation (IPA) levels. While the 1OT monolayers are more inclined to absorb light polarized in the y-direction, the 1T structures absorb light equally, independent of the polarization direction. We perceive that the 1T phase is the most promising candidate for photovoltaic devices; in particular, the 1T PdSSe system possesses a maximum power conversion efficiency (PCE) of 29.31% if light trapping techniques are used to enhance absorbance. Amongst the 1OT materials, PdS2 features the highest PCE of 8.38%. Our results constitute the first step to encourage experimental studies towards the fabrication of Pd-based regular and Janus transition metal dichalcogenides photoabsorbers and give hints of how to increase the PCE of such materials.