Abstract
A method for estimation of the percentage of interfacial oxide layer break-up in the emitter region of a polysilicon emitter transistor from a knowledge of the base saturation current is proposed. Values predicted by this method are compared with experimental results and good agreement is observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
