Abstract
In this work, the geometry effects on the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si0.7Ge0.3 matrix fabricated by neutral beam etching are studied. We formulate and solve the Schrödinger equation with an effective mass approach in k space. The radius, separation, and shape effects on the energy band and density of states of the explored NPs are calculated and discussed. The separation of NPs plays a crucial factor to manipulate the band structure among the aforementioned factors.
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