Abstract
Bismuth germanium silicon oxide single crystal was grown from Bi 4Ge 3O 12—Bi 4Si 3O 12 solid solution system by the Czochralski technique using resistively heated platinum crucible. Structural, optical transmission, photoluminescence and energy/time resolution studies have been made on the grown crystals. Optical transmission spectrum showed the magnitude of transmission about 63% at the peak emission without any trace of absorption edges. Photoluminescence results revealed the emission has a peak at 481 nm for an excitation wavelength of 298 nm. We inferred that voids and gaseous bubble inclusions present in the crystal and detector testing experimental conditions, in addition, cause deterioration in energy and time resolutions.
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