On the electronic properties of β-rhombohedral boron interstitially doped with 3d transition metal atoms

Abstract

The controlled modification of the p-type character of pure boron-rich solids to n-type by suitable doping is an essential prerequisite for technical applications. Interstitial doping of β-rhombohedral boron with V, Cr, Fe and Ni fulfils this requirement, while Cu and Co do not. Comparative investigations of the Seebeck coefficient, the DC electrical conductivity, the optical absorption and the dynamical conductivity of BV, BCo and BFe lead to the conclusion that donor levels positioned between the conduction band and the uppermost intrinsic electron trapping level and of sufficient density to overcompensate unoccupied valence and gap states are necessary for n-type conductivity. In contrast to Fe, the interstitial accommodation of V atoms seems to reduce the concentration of possible gap states.