Abstract
The dc current-voltage characteristics of the metal chalcogenide glassy semiconductor Cu0.10As0.40Se0.50, using a double point contact electrode system, are obtained, showing nearly ohmic behavior. The electrical resistance obeys an Arrhenius-type dependence on the ambient temperature. Also, relationships between the applied voltage and the delay time, obtained by interrupting the process just before the electrical switching phenomenon takes place, and between the threshold voltage and the ambient temperature, are found and explained by a physical model based on the thermal breakdown theory. Finally, a phenomenological dependence of threshold voltage on the difference between the glass transition and ambient temperatures is also checked, obtaining excellent agreement for the experimental results.
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