Abstract
This paper describes the preparation and some of the electrical properties of evaporated manganese/silicon oxide cermet thin films. The variation of the electrical resistivity with starting composition (0 to 60% by weight) is explained in terms of the formation of silicides Mn 3 Si and Mn 5 Si 3 . The composition of the cermets was obtained using electron diffraction microscopy and infra-red absorption spectroscopy.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
