Abstract
Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation of vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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