Abstract
Researchers have developed nonlinear super-resolution optical storage for the past twenty years. However, several concerns remain, including (1) the presence of readout threshold power; (2) the increase of threshold power with the reduction of the mark size, and (3) the increase of the carrier-to-noise ratio (CNR) at the initial stage and then decrease with the increase of readout laser power or laser irradiation time. The present work calculates and analyzes the super-resolution spot formed by the thin film masks and the readout threshold power characteristic according to the derived formula and based on the nonlinear saturable absorption characteristic and threshold of structural change. The obtained theoretical calculation and experimental data answer the concerns regarding the dynamic readout threshold characteristic and CNR dependence on laser power and irradiation time. The near-field optical spot scanning experiment further verifies the super-resolution spot formation produced through the nonlinear thin film masks.
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