Abstract
The dynamic behaviors of silicon single crystal under nanosecond laser irradiation are investigated. To comprehensively study the dynamic behaviors of silicon single crystal under laser irradiation, the effects of laser intensity, temperature, and crystal orientation are directly studied using molecular dynamics simulations. The relevant physical backgrounds are learned under the help of Rankine-Hugoniot theory. It shows the amplitude of laser induced shock wave will increase with the increase of laser intensity. The shock velocity can be greatly affected by lattice orientation, temperature and the amplitude of shock wave. With the increase of shock pressure and temperature, laser induced damages, including virtual melting, pre-melting, shear belt become severe. And laser induced damages inversely result in shock attenuation. It also can be found that damages grow along the 〈1 1 1〉 crystal planes, due to the concentration of dislocation belt along these planes. Our work sheds insight into the dynamic behaviors of silicon single crystal under the irradiation of nanosecond laser.
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