Abstract
AbstractGaP grown by the SSD technique was doped by sulphur in a wide concentration range. Using chemical, electrical and radiochemical methods the concentration and temperature dependence of the distribution coefficient k during this crystallization from the nonstoichiometric melt was determined. With the crystallization temperature at 1000°C for k a value 6.9 ± 1.4 was found independent on the sulphur quantity added. The distribution coefficient decreases clearly with increasing temperature.
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