On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

D Varghese,K Ahmed,S Mahapatra,F Nouri,M Alam,D Saha

doi:10.1109/iedm.2005.1609444

On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

D Varghese, K Ahmed + Show 4 more

https://doi.org/10.1109/iedm.2005.1609444

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Publication Date: Dec 5, 2005

Citations: 95

Affiliation: Indian Institute of Technology Bombay

#Plasma Nitrided Gate Oxides #Negative Bias Temperature Instability + Show 8 more

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Abstract

Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation

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