Abstract
Conventional Si-gate n-MOS technology using LOCOS for the LSI has been re-designed for the active component isolation, eliminating the use of silicon nitride (Si 3N 4) layer as a masking oxide. This reduces the number of in-between processing steps. It also eliminates problems related to LOCOS like bird's beak formation and electrical encroachment of active areas. Devices were fabricated with the re-designed E/D process using a set of test masks and evaluated for their performances. Measured parameters were found to be in close agreement with their corresponding theoretical values.
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