On the determination of the defect parameters of repulsive centers by deep level transient spectroscopy

Abstract

The way the signature ( K T, E T) of a repulsive center in a semiconductor is obtained from an Arrhenius plot by DLTS has been analysed. It is shown that the inclusion of peaks recorded with very short pulses inevitably leads to erroneous results. It is also shown that for most repulsive centers, there is no simple way to extract the exact signature from an Arrhenius plot. Finally, a straightforward method to measure the capture cross section of a deep level and its temperature dependence, which allows for slow capture and reemission, is presented.