Abstract
The depth profile of phosphorus concentration in phosphorus-doped silicon was shown to be measureable with an accuracy of 1–3% by the use of liquid scintillation counting after neutron irradiation. Both the amount of Si and P are determined by neutron activation analysis followed by liquid scintillation counting for 1–5 hours after the end of irradiation and 5–10 days after irradiation, respectively. Concentrations as low as 10 ppm and thicknesses of 20 nm can be determined.
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