On the design of ion implanted buried channel charge coupled devices (BCCDs)

Abstract

The allowable range for the channel dose of a buried channel CCD is obtained. The maximum charge handling capacity without surface trapping effect is found to depend on the channel dose and the substrate concentration. In the case of two phase buried channel CCDs, the barrier implant dose can be estimated depending on the charge storage capacity desired. The result is applicable to ion implanted shallow junction devices and can be extended to deeper junction epitaxial buried channel devices.