Abstract
A 3*3 matrix amplifier for the 6-18-GHz frequency band has been developed. Using MESFETs fabricated on VPE (vapor-phase epitaxial) material, gains of G=23.5+or-0.5 dB with a maximum reflection loss of RL=-10 dB were obtained from 5.2 to 18.7 GHz. Gain improvement to G=29.1+or-1.1 dB at a worst-case reflection loss of RL=-7.5 dB between 4.6 and 18.3 GHz when MBE (molecular-beam epitaxial) material was used for the MESFETs. In addition to the experimental results, important design considerations, especially in regard to the termination impedances of the idle ports, are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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