Abstract
The fabrication and performance of a MOSFET-like silicon light source that is able to monolithically integrate with silicon photo-detector in standard 3-μm CMOS process technology is introduced. The relation between gate voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> and the breakdown voltage BV of the p-n junction in the gate-controlled diode is simulated to show that the modulation of light intensity can be reasonably explained by the decrease in BV, since the reverse-bias of the junction is fixed and the relation between the reverse current flowing through the p-n junction and the light intensity is linear. Based on such linearity, the paper attempts to explain the physical mechanisms responsible for the light emission in Si as a function of hot-carrier distribution functions. In order to further investigate the optical properties, measurement of photon emission and reverse current in silicon gate-controlled diode in avalanche breakdown has been made using electrical and near-infrared microscopy.
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