Abstract
AbstractAn analysis of experimental data for InSb is made and the deformation potential constant ϵ1 of the conduction band is determined. It is shown that the correctly calculated value of |ϵ1| is about 30 eV. In the calculations of the carrier mobility for heavily doped semiconductors it is essential to take into account the effect of the band nonparabolicity on the transition probabilities and the screening of the scattering potentials by conduction electrons, and additionally at high temperatures it is necessary to consider the influence of electronphonon interaction on the effective mass and energy gap. The small values of |ϵ1| reported by some authors, who studied transport phenomena at low temperatures, are obtained under the condition ħ/τ > kBT (τ is the time between successive collisions), i.e. when the theory used is invalid.
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