Abstract
In the present work, the dechanneling of protons in Si (110) is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range Ep =1 .8 − 2. 4M eV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and xc ,w hich represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra of channeled protons along the Si (110) crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.
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