On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

Abstract

The effect of preliminary low-energy (~1 keV) and low-dose (~1012–1014 cm–2) ion bombardment on the initial stages of growth of Si films on a CaF2/Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.