Abstract
Near-field (NF) scan immunity is a powerful technique to identify the root-cause of failures produced during radiated immunity (RI) tests at the integrated circuit and printed circuit board (PCB) levels. However, a prediction method of the RI level from NF scan immunity results is still lacking. This type of method would help board designers to anticipate risks of RI noncompliance related to PCB directly after an NF scan campaign. This two-part article addresses this issue. In the first part, the equivalence between far-field (FF) and NF coupling on a microstrip line is discussed in order to derive an estimator of the FF induced voltage from NF scan results.
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