Abstract
In this paper, we present the results of studies on optimalisation of morphology of the SnO 2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al 2O 3 ceramic plate heated in the range 235–295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO 2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO 2 thin films to nitrogen dioxide NO 2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
