Abstract
The morphology of vacuum deposited copper phthalocyanine (CuPc) thin films surface deposited on Si(111) have been studied using the contact mode Atomic Force Microscope (AFM). The influence of substrate temperature during deposition and of the post-deposition UHV annealing on surface roughness as well as on the average and maximum grain height was determined. The observed changes of surface morphology were in a good correlation with the shift of surface Fermi level position in the band gap after O 2 exposure determined in our recent photoemission studies.
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