On the control of epitaxial growth and stray grains during laser-directed energy deposited Ni-based single crystal superalloy

Abstract

Laser-directed energy deposition (L-DED) is considered as an effective repair method for damaged single-crystal (SX) superalloy turbine blades. However, controlling stray grains (SGs) and epitaxial growth is still the major problem. This study investigated the influences of pre-solution treatment and intrinsic heat treatment (IHT) on the formation of SGs and epitaxial growth of L-DED René N5 SX superalloy. The γ/γ’ eutectics and coarse γ’ precipitates at the inter-dendrite region can be eliminated after pre-solution treatment procedures before the L-DED experiment. A lower temperature in pre-solution treatment resulted in the retention of residual γ/γ’ eutectics and coarse γ’ precipitates. Thus, the aggravated element segregation within the local melt pool and interface collapse during the L-DED process can result in stray grains (SGs) formation. Improved pre-solution treatment procedures can help reduce SGs caused by the residual carbides at the bottom of the molten pool. Besides, the SG formation in the deposited layers can be attributed to the recrystallization as a result of high thermal stress during the IHT in thermal cycles. The optimized pre-solution treatment procedure reduced the elemental segregation of the substrates, resulting in a larger primary dendrite arm spacing (PDAS) from the bottom of the deposited layers. Due to IHT during thermal cycles in the deposited layers, the partial aging treatment promoted the re-precipitation and growth of γ’ phase. Meanwhile, the optimized pre-solution treatment procedure decreased the size of the heat-affected zone (HAZ) caused by thermal cycles. In summary, by optimizing the substrates' pre-solution treatment procedures to eliminate the γ/γ’ eutectics, the formation of SGs resulting from substrate segregation can be controlled. This work provides the potential guidance of substrate pre-treatment for L-DED repair of SX superalloys.