On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

Gulmurza Abdurakhmanov

doi:10.4236/wjcmp.2014.43021

Abstract

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.

Highlights

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium
1) The known conduction mechanisms of the DSG cannot explain the origin of the minimum of the temperature dependence of resistivity and the effect of the glass and dopant composition, firing conditions (Tf and τ) on its location
2) The minimum of the temperature dependence of the DSG resistivity is the result of decreasing of the energy gap between the impurity band and the valence band of the glass by temperature

Summary

Introduction

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. An “enigmatic” minimum near the room temperature [3]-[10] and metallic conductance beyond it [11] take place in the silicate glass doped by oxide compounds of ruthenium. It is shown that the minimum arises from the merge of impurity subband into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity

Experiment

Conduction Mechanisms of DSG

Conclusions