Abstract
High-resistivity GaAs double-injection devices have recently been investigated by Ferro and Gandhi. They found a sublinear ``current saturation'' in oxygen-doped n-type material but not in chromium-doped p-type GaAs, causing them to refute an interpretation by the relaxation-case theory in favor of field-enhanced trapping. We demonstrate that simple relaxation-case arguments in fact correctly predict the different behavior. Sublinear current-voltage characteristics as resulting from recombinative space-charge injection are more probable in n-type than in p-type materials by a factor b2, where b is the mobility ratio.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.