On the comparative assessment of 1.7 kV, 300 a full SiC-MOSFET and Si-IGBT power modules

Abstract

This paper deals with comparative assessment through static and dynamic measurements performed for full SiC-based MOSFET and Si-based IGBT power modules. The full SiC-MOSFET and Si-IGBT based power modules all have an identical voltage rating of 1.7 kV and a current rating of 300 A. Full SiC-MOSFETs presents a lowest on-resistance (RON) of 10.0 mΩ, blocking voltage of 1800 V and a threshold voltage around 2.5 – 3.0 V at 300 K, for most of the transistor samples, as promised by the manufacturer. Dynamic tests using a single pulse test setup have been performed with commercial gate drive unit from Cree that is especially compatible to full SiC- and Si-IGBT power modules footprint. A turn on (turn off) energy loss of full SiC-MOSFET module at 1000 V (230 A) and 1200 V (275 A) was 12 (28) mJ and 19 (41) mJ, respectively using 300 µH load inductance at 25 °C. Similarly, a turn on (turn off) energy loss of hybrid power module at 1000 V (235 A) and 1200 V (280 A) was 68 (86) mJ and 85 (115) mJ, respectively using 300 µH load inductance at 25 °C. Compared to Si-IGBT modules, no reverse recovery is observed for full SiC power modules. Temperature independent switching loss performance is also observed.