Abstract
AbstractThe influence of the conditions of deposition on the distribution of boron between gaseous and solid phase has been calculated thermodynamically. The results of the experimental investigations in a system for deposition on rods agree with the thermodynamically calculated dependences up to concentrations of boron in deposited silicon of nearly 5 × 1016 cm−3. At lower concentrations of boron a significant decrease of the incorporation of boron is found which cannot be explained by the thermodynamic model.
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