Abstract
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, CNL vb(GaSe) = E v + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.
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