Abstract
Silicon-on-insillator (SOI) films, 4 μn thick, prepared by zone melting recrystallizntion (ZMR) are used for preparation of CMOS transistors. The transistors exhibit good characteristics, comparable to those of a reference bulk Si wafer. Investigating the channel mobilities and threshold voltages it is found, that a subgrain boundary does not influnce these parameters also if it is present in the channel region. Silicon-on-insillator. (SOI) Schicliten, 4 μm dick, hergestellt mittels Zonenschmelzrekristallisation, werden fur die Praparation von CMOS-Transistoren genutzt. Die Transistoren zeigen gute Eigensehaften, vergleichbar mit denen cines Referenzwafers. Untersuchungen der Kanalbeweglickkeiten und der Schellspannungen ergeben, das eine Kleinwinkelkorngrenze diese Parameter nicht beeinflus, auch wenn sie in Kanalgebieten liegt.
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