Abstract
In this study, C29H32O17 was deposited onto p-type Si crystal to obtain Al/(C29H32O17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε″), loss-tangent (tanδ), electric-modulus (M′ and M″) and ac electrical-conductivity (σac) of these structures were investigated using impedance-dielectric-spectroscopy. All these parameters were found strong function of frequency and voltage due to a special-distribution of surface-states (Nss) at depletion and series-resistance (Rs) at accumulation-region. While the ε′, ε″ and tanδ values decrease with frequency increment, M′ and σac values increase. But, M″-V and M″-ln(f) plots have a peak for each bias-voltage, respectively. The magnitude of M″-V peak decreases with frequency increment, its position shifts towards to higher bias voltages due to restructure and reordering of Nss, Rs and polarization effects. Experimental-results confirmed that the polarization can be easily occurred at low-intermediate frequencies and the majority of Nss, consequently, contribute to the deviation of dielectric properties of the MPS structure.
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