Abstract
In order to design submicrometer Si MOSFETs properly, the specific contact resistivity rho /sub c/ has to be controlled. The rho /sub c/ is known to be a function of both the barrier height and the Si surface doping concentration. An existing theory is used to generate rho /sub c/, emphasizing details in the practical regimes, with a careful choice of proper parameters such as the tunneling effective mass, which is a function of both temperature and doping concentration.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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