Abstract
Resistive switching characteristics of Ag/SiO 2 /Pt memory cells with different set current compliance are studied. Ag/SiO 2 /Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage ( 2 /Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO 2 /Pt cells are discussed.
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