Abstract
Two mathematical models are developed and applied to RTCVD reactors. They involve the resolution of momentum, heat and mass transfer equations with homogeneous and heterogeneous chemical reactions. A detailed discussion about the effects of some physical parameters is undertaken so that a fundamental understanding of gas flow patterns and the contribution of each chemical species to the deposition of polysilicon is obtained
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
