Abstract
It is shown that the conventional picture of the interband Auger recombination, as presented in the Beattie-Landsberg theory, is inadequate in a fundamental way. In that picture, the recombination arises from direct and pairwise energy and momentum transfer to single-particle excitations occuring through screened matrix elements. The role played by the collective electronic density fluctuations is clarified, and the enhancement of the recombination rate, due to plasmon emission, in heavily doped narrow-gap semiconductors is calculated within the context of the theory we develop in this work.
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