On the Ballistic Transport in Nanometer-Scaled DG MOSFETs

Abstract

The scattering effects are studied in nanometer-scaled double-gate MOSFET using Monte Carlo simulation. The nonequilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by electrons. We show that the number of ballistic electrons at the drain-end, even in terms of flux, is not the only relevant characteristic of ballistic transport. Then, the drive current in the 15-nm-long channel transistor generations should be very close to the value obtained in the ballistic limit even if all electrons are not ballistic. Additionally, most back-scattering events, which deteriorate the on current, take place in the first half of the channel and, in particular, in the first low field region. However, the contribution of the second half of the channel cannot be considered as negligible in any studied case i.e., for a channel length below 25 nm. Furthermore, the contribution of the second half of the channel tends to be more important as the channel length is reduced. So, in ultrashort-channel transistors, it becomes very difficult to extract a region of the channel, which itself determine the drive current I/sub on/.