Abstract
Abstract Transmission electron microscopy has been used to investigate the atomic structure of the Al-GaAs(100) interface. Samples grown by molecular beam epitaxy (MBE) on the GaAs c(2 × 8) and (4 × 6) surfaces showed the epitaxial relationship (100)Al||(100)GaAs, [010]Al||[011]GaAs. Samples grown by MBE on the c(4 × 4) surface and also in a conventional evaporator on an ion-etched (100) surface showed the additional relationship (110)Al||(100)GaAs with either [110]Al||[011]GaAs or [001]Al||[011]GaAs. (110) epitaxy was attributed to nucleation at surface steps and the marked predominance of one crystallographic variant was attributed to the non-equivalence of the 〈011〉 directions in the GaAs(100) surface. Studies on plan-view and cross-sectional specimens showed that a 1·4% mismatch in regions of Al(100)/GaAs(100) was usually accommodated by misfit dislocations with Burger's vectors b=(a/4) 〈011〉 referred to the GaAs. Occasionally misfit dislocations of b=(a/2) 〈010〉 type were observed. It is shown that t...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
