On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

Abstract

Best practice in mitigation strategies for single-event transients (SETs) in radio-frequency (RF) receiver modules is investigated using a variety of integrated receivers utilizing inverse-mode silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs). The receivers were designed and implemented in a 130-nm SiGe BiCMOS technology platform. In general, RF switches, low-noise amplifiers (LNAs), and downconversion mixers utilizing inverse-mode SiGe HBTs exhibit less susceptibility to SETs than conventional RF designs, in terms of transient peaks and duration, at the cost of RF performance. Under normal RF operation, the SET-hardened switch is mainly effective in peak reduction, while the LNA and the mixer exhibit reductions in transient peaks as well as transient duration.