Abstract
We report on E- Beam Lithographic (EBL) and Reactive Ion Etching (RIE) experiments with the positive Chemically Amplified Resist (CAR) CAMP6 in the fabrication of silicon structures and parts ranging in size from the nanometer scale up to the micron scale in relatively thick resist film. 30keV direct write EBL was used to study the pre- and post-exposure processing on the resulting resist-relief structures. We measured the basic resist characteristics and also the influence of the proximity effects. The resolved single-layer resist-relief structures at optimised process conditions have shown high aspect ratios with nearly vertical side-walls and T-top-profiles in 0.6 – 1.7μm thick films up to nanometer lateral dimensions. The paper will discuss the deep pattern transfer results into the underlying 2.6 μm thick SiO 2 by using RIE.
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