On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide

Abstract

We critically examine the applicability of the semi-analytical approach of Shur (M. Shur, Electron Lett 12, 615 (1976)) in evaluating the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide. In particular, we contrast results obtained using this semi-analytical approach of Shur with those obtained using Monte Carlo simulations of the electron transport. Our approach will be to examine the response of an ensemble of electrons to the application of a constant and uniform applied electric field. For the purposes of this analysis, three aspects of the transient electron transport response will be considered: (1) the dependence of the electron drift velocity on the time elapsed since the onset of the applied electric field, (2) the dependence of the average electron energy on the time elapsed since the onset of the applied electric field, and (3) the dependence of the average electron displacement on the time elapsed since the onset of the applied electric field. The results obtained show that this semi-analytical approach of Shur produces results that are very similar to those produced using Monte Carlo simulations. Thus, this semi-analytical approach of Shur should be applicable for the treatment of non-uniform and time-varying electric fields, making it a useful tool for the treatment of the transient electron transport response within electron device configurations.